Open AccessAtomic layer deposition of Ruthenium on different interfaces for an advanced metallization system of ICs
Author(s) -
Е. А. Смирнова,
A. V. Miakonkikh,
A. E. Rogozhin,
К. В. Руденко
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012045
Subject(s) - atomic layer deposition , nucleation , tantalum nitride , materials science , ruthenium , tantalum , layer (electronics) , thin film , chemical engineering , tin , deposition (geology) , titanium nitride , analytical chemistry (journal) , ellipsometry , scanning electron microscope , titanium , nitride , nanotechnology , composite material , chemistry , metallurgy , catalysis , paleontology , biochemistry , organic chemistry , chromatography , sediment , engineering , biology
Nucleation effects were experimentally studied for ruthenium thin films grown by plasma-enhanced atomic layer deposition (PEALD) using O 2 plasma. Bis(ethylcyclopentadienyl)ruthenium (II) (Ru(EtCp) 2 ) was used as Ru precursor. The films with the thickness 10 nm on different underlying thin layers (interfaces), including Si, SiO2, Ta 2 O 5 , TiN, and TaN were deposited to investigate the effects of interfaces for nucleation of the Ru in ALD process. Some of the samples were previously processed in ammonia and oxygen plasma to enhance nucleation. The processes of forming barrier layers based on titanium and tantalum nitrides by plasma-enhanced atomic layer deposition were also studied. Films properties were evaluated by spectral ellipsometry, scanning electron microscopy and atomic force microscopy.