Open AccessPhotoluminescence of n-InP (100) surface passivated with aqueous Na2S solution
Author(s) -
Yu. M. Serov,
М. В. Лебедев,
О. В. Рахимова,
T. V. L’vova,
I. V. Sedova
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012035
Subject(s) - passivation , photoluminescence , aqueous solution , materials science , semiconductor , inorganic chemistry , intensity (physics) , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , optics , layer (electronics) , chromatography , physics
Passivation of the n-InP(100) surface with an aqueous solution of sodium sulphide (Na 2 S) has been investigated by spectroscopic photoluminescence (PL). After sulphide treatment the PL signal intensity of InP increased significantly and this increase is dependent on duration of sulphide passivation. The correlation of the increase in the PL intensity after sulphide treatment with the variation of the solution pH in contact with InP(100) surface has been established, that expect the possibility for optimization of the passivation process by monitoring the change of the solution pH value in the course of sulphide treatment of the semiconductor.