Open AccessLight-emitting hexagonal 9R-Si phase obtained by implantation of Kr+ ions in Si and SiO2/Si
Author(s) -
Aleikolskaya,
Д. С. Королев,
A. A. Konakov,
A. N. Mikhaylov,
А. И. Белов,
М. О. Марычев,
Renat Murtazin,
Д. А. Павлов,
D. I. Tetelbaum
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012031
Subject(s) - materials science , irradiation , silicon , transmission electron microscopy , photoluminescence , hexagonal phase , ion , analytical chemistry (journal) , spectroscopy , phase (matter) , ion implantation , hexagonal crystal system , optoelectronics , crystallography , nanotechnology , chemistry , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
To study the mechanism of a 9R-Si hexagonal phase formation upon ion irradiation of the SiO 2 /Si system, three types of experimental samples have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM): SiO 2 /Si system irradiated by Kr + , silicon irradiated by Kr + and silicon irradiated by (Kr + + O + ) ions. All the samples were annealed after irradiation. The first type sample shows the presence of the 9R-Si phase and PL band at ∼ 1240 nm; the third type sample shows the same PL band and twin defects; for the second type sample, the PL at 1240 nm is not detected. Based on the results, the role of mechanical stresses, radiation defects and oxygen in the formation of the hexagonal silicon phase is discussed.