Open AccessElectrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111)
Author(s) -
V. O. Gridchin,
K. P. Kotlyar,
R. R. Reznik,
Bogdan R. Borodin,
D. A. Kudryashov,
P. A. Alekseev,
G. É. Cirlin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012030
Subject(s) - materials science , nanostructure , morphology (biology) , tandem , optoelectronics , electrical resistivity and conductivity , quantum tunnelling , nanotechnology , nanocrystal , composite material , genetics , engineering , electrical engineering , biology
The work is devoted to the study of electrical properties of InGaN nanostructures with branched morphology (NSs) on p-type Si substrates. It was found that the IV curves between InGaN NSs and p-Si are close to linear, which could indicate a tunneling conductivity. Such unique structures as InGaN NSs on p-Si can be used as building blocks for water splitting devices and tandem solar cells.