Open AccessLuminescent vertically oriented nanosheets MoS2 by low temperature MOCVD
Author(s) -
Y. Khattab,
Sergei Alexandrov,
I. S. Mukhin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012029
Subject(s) - metalorganic vapour phase epitaxy , materials science , photoluminescence , chemical vapor deposition , raman spectroscopy , enhanced data rates for gsm evolution , x ray photoelectron spectroscopy , optoelectronics , inert , layer (electronics) , luminescence , nanotechnology , thin film , chemical engineering , epitaxy , chemistry , optics , telecommunications , computer science , physics , engineering , organic chemistry
Controlled growth orientation of MoS 2 thin films is the key requirement to realize their vast number of applications, as material has strong anisotropic properties, in addition chemically active edge sites over inert in-plane MoS2 flakes is very important for catalytic activities. Here, we demonstrate growth dense and edge-enriched vertically oriented MoS 2 (V-MoS2) using MOCVD technique with deposition temperature as low as 250°C. SEM results demonstrated the vertically oriented growth and high density of edge terminated MoS2 sheets. While Raman and XPS confirm MoS 2 composition of sheets with good quality. At Room temperature, there is strong photoluminescence emission from sheets due few layer structures.