Open AccessFormation of carbon nanoscale elements of vacuum microelectronics by plasma treatment of SiC
Author(s) -
A A Rezvan,
И. Н. Коц,
R. V. Tominov,
В. С. Климин,
О. А. Агеев
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012028
Subject(s) - microelectronics , field electron emission , materials science , plasma , nanoscopic scale , electric field , etching (microfabrication) , current density , scanning electron microscope , field ion microscope , carbon fibers , current (fluid) , ion , plasma etching , topology (electrical circuits) , analytical chemistry (journal) , optoelectronics , electron , nanotechnology , chemistry , electrical engineering , composite material , layer (electronics) , physics , organic chemistry , quantum mechanics , chromatography , composite number , engineering
The use of focused ion beams and atomic plasma chemical etching for forming an array of field emission structures on surface of SiC substrates is considered. SF 6 was used as the fluorine-containing gas. Topology of formed elements was monitored using scanning electron microscopy method at Nova NanoLab 600. Dependences of geometric parameters of formed structures (topology of tip and its depth) on emission current were determined. Dependence of change in applied voltage and generated electric field of used to study probe on emission current density is also considered.