Open AccessGrowth technology and characterization of bulk crystalline gallium oxide
Author(s) -
D.I. Panov,
V. A. Spiridonov,
D. A. Zakgeim,
A. V. Kremleva,
D. A. Bauman,
А. Е. Романов,
V. E. Bougrov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012024
Subject(s) - materials science , gallium , characterization (materials science) , crystal (programming language) , crystal growth , gallium oxide , crystallography , quality (philosophy) , oxide , orientation (vector space) , nanotechnology , chemistry , metallurgy , geometry , computer science , mathematics , physics , quantum mechanics , programming language
In this paper, we study the process of growth from the melt by Chokhralsky method of bulk β-Ga2O3 crystals. The effect of different configurations of growth zones and ambient composition on resulting bulk crystal quality has been evaluated. It is shown that the vertical gradient has a great influence on the quality of the growing crystal and the stability of growth. The optical properties of obtained β-Ga2O3 crystals were investigated. The crystallographic orientation of crystal faces and the structural quality of the samples were studied with the use of XRD.