Open AccessRaman analysis of epitaxial GaN layers grown on Si (111) by PA MBE
Author(s) -
Ekaterina Lubyankina,
V. V. Toporov,
A. M. Mizerov,
S. N. Timoshnev,
K. Yu. Shubina,
B. H. Bairamov,
A. D. Bouravleuv
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012022
Subject(s) - materials science , raman spectroscopy , epitaxy , micrometer , optoelectronics , layer (electronics) , molecular beam epitaxy , stress (linguistics) , optics , nanotechnology , physics , linguistics , philosophy
Epitaxial GaN layers were synthesised by PA MBE on Si (111) with and without using the high-temperature nitridation. We performed a complete investigation of their structural and optical properties. It was proven that the presence of GaN epitaxial layer less than a micrometer leads to the appearance of tensile stress in the structure. The stress was calculated and compared for the structure with nitridation and without it. The effect of nitridation on holes density was also observed by Raman spectroscopy and Hall measurements.