Open AccessRaman and AFM studies of epitaxial graphene intended for manufacturing of transistors
Author(s) -
Ilya A. Eliseyev,
A. V. Babichev,
S. P. Lebedev,
P. A. Dementev,
A. V. Zubov,
Alexander A. Lebedev,
V. Yu. Davydov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012018
Subject(s) - raman spectroscopy , kelvin probe force microscope , atomic force microscopy , graphene , materials science , epitaxy , nanotechnology , transistor , doping , microscopy , optoelectronics , analytical chemistry (journal) , chemistry , optics , physics , layer (electronics) , quantum mechanics , voltage , chromatography
Graphene is considered as a promising material for electronic applications. In this work, micro-Raman spectroscopy, atomic force microscopy and Kelvin-probe force microscopy are used to study three epitaxial graphene samples: two commercially-available ones and one grown using a home-made setup. The obtained data indicates significant differences in homogeneity of strain and doping level, concentration of bilayer inclusions, surface topography and surface potential. Analysis of the measurements data allows us to establish connections between the topography of the samples and their structural properties. The results of these studies will help to understand the characteristics of transistors that are to be made on the basis of the studied samples.