Open AccessThe effect of plasma immersion ion implantation of Ne+ or Ar+ or Kr+ on the forming voltage of the resistive switching in the structure Ni/Pt/HfO2(10nm)/TaN(5nm)/TiN
Author(s) -
O. O. Permyakova,
A. V. Miakonkikh,
К. В. Руденко,
A. E. Rogozhin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012009
Subject(s) - ion implantation , plasma immersion ion implantation , ion , materials science , tin , resistive touchscreen , plasma , analytical chemistry (journal) , atomic physics , chemistry , electrical engineering , metallurgy , physics , organic chemistry , chromatography , quantum mechanics , engineering
The effect of ion implantation on the characteristics of resistive switching in the structure of Ni/Pt/HfO 2 /TaN/TiN with an oxide layer thickness of 10 nm is considered. It was shown that after implantation of Ne + ions, the forming voltage decreases by 0.5 V, while after implantation of Ar + ions, the share of the forming-free cells increased from 0.1 to 0.6. Resistive switching after implantation of Kr + ions is entirely absent.