Open AccessA new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon
Author(s) -
А. С. Гращенко,
С. А. Кукушкин,
А. В. Осипов
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012005
Subject(s) - silicon carbide , epitaxy , materials science , silicon , layer (electronics) , crystallography , surface (topology) , geometry , carbide , morphology (biology) , composite material , optoelectronics , chemistry , geology , mathematics , paleontology
In the presented work, the method of substitution of atoms was used to form an epitaxial nanostructured profiled SiC layer with a given geometry on a Si crystal. The found conditions for the synthesis of the SiC layer with the initial geometry and morphology of the Si surface preserve the initial state, covering layered SiC, completely repeating the profile of the initial Si surface.