Open AccessCalculation of sputtering yields of SiO2 layers from the Si surface by helium ions bombardment
Author(s) -
V. V. Manukhin,
M.V. Manukhin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1683/3/032002
Subject(s) - sputtering , ion , silicon , helium , substrate (aquarium) , atomic physics , materials science , layer (electronics) , oxide , silicon oxide , surface (topology) , analytical chemistry (journal) , chemistry , physics , optoelectronics , thin film , composite material , nanotechnology , geometry , metallurgy , mathematics , chromatography , oceanography , organic chemistry , silicon nitride , geology
An analytical model of the sputtering of two-component layered inhomogeneous targets by light ions bombardment has been developed, an analytical formula has been obtained, which makes it possible to calculate the total and partial sputtering coefficients of a binary layer of target heterogeneity by light ions bombardment. The formula obtained is used to calculate the sputtering coefficients of silicon oxide layers from the surface of a uniform silicon substrate. The calculation results are in good agreement with the data of computer simulation.