Open AccessInfluence of annealing conditions on tripe-layer TiO2/Si3N4/SiO2 antireflection coatings for GaAs solar cells
Author(s) -
Liushun Wu,
Xiaoqiang Li
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1676/1/012217
Subject(s) - annealing (glass) , materials science , plasma enhanced chemical vapor deposition , diffraction , analytical chemistry (journal) , fourier transform infrared spectroscopy , chemical vapor deposition , spectroscopy , infrared spectroscopy , silicon , infrared , sputtering , x ray crystallography , crystallography , thin film , optics , optoelectronics , chemistry , nanotechnology , composite material , physics , organic chemistry , chromatography , quantum mechanics
In this work, TiO 2 /SiO 2 /Si 3 N 4 triple-layer antireflection coatings (TLARC) were prepared on GaAs substrate by RF sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD). Influence of annealing conditions on the structure and optical properties of TLARC were also investigated. The structure and optical proprieties were analyzed by Grazing Incidence Angle X-ray Diffraction (GIXRD) Fourier Transform Infrared Spectroscopy (FT-IR), Atomic Force Microscopy and UV-VIS spectroscopy. The experimental results were summarized as follows: diffraction peaks of SiO 2 , Si 3 N 4 and TiO 2 respectively appeared in the as-deposited status, and after annealing, new diffraction peak at 25.2° corresponds to TiO 2 was confirmed by checking out PDF cards; Stretching vibration of Ti=O, Si-O-Si and N-Si-N was confirmed by FT-IR spectrum; The average reflectance of the TLARC after annealing at 750 °C and holding for 5 min reached the lowest value, which was approximately 7.84 %.