Open AccessStudy on the enhancement of optical and electrical properties of GaN by doping
Author(s) -
Weili Liu
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1676/1/012005
Subject(s) - doping , materials science , optoelectronics , semiconductor , engineering physics , voltage , electrical engineering , engineering
GaN is a hot material of semiconductor devices, and it is extensive researched because of its outstanding performance. At the same time, doping can change the performance of GaN in the expected direction. This paper mainly introduces the main properties of GaN material. Meanwhile, according to the current application of GaN, it focuses on the effects of some common doping-types on the optical and electrical properties of GaN material. Through the doping of different elements, the optical and electrical properties of GaN will be improved in different aspects. For example, c-doping improves the breakdown voltage of AlGaN/GaN devices. Finally, the development prospect of GaN doped materials and devices is described.