Open AccessCdO/FTO Schottky photodetector with enhanced spectral responsivity and Specific detectivity prepared by electrolysis method
Author(s) -
N. Ahmed,
Muhaj T. Abdullah,
Saad Khalid Rahi,
Nadir Fadhil Habubi
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1660/1/012047
Subject(s) - cadmium oxide , materials science , thin film , crystallite , responsivity , band gap , optoelectronics , surface roughness , schottky diode , semiconductor , nanotechnology , photodetector , composite material , cadmium , metallurgy , diode
One of the important materials for applications in many photoelectric filed [just like solar cell, optoelectronic and other kinds on devices] is cadmium oxide thin films. There are several physical or chemical synthetic methods have been used to prepare transparent CdO films as described by many researchers. The X-ray diffraction study has confirmed the formation of CdO with nano-size scale. For this research CdO/FTO thin film has been prepared by electrolysis. The thin film is investigated by XRD, SEM and AFM surface morphology properties. XRD analysis showed that CdO films are a polycrystalline and exhibit cubic crystal structure with (111, 200, 311 and 222) orientation and the preferred orientation is 111. AFM and SEM were applied to study the morphology and estimate the surface roughness of the films obtained. (RMS) found that film roughness was 21.7 nm. The CdO film are n-type semiconductors and possess a direct optical band gap around 2.4 eV as shown in optical property studies.