Open AccessThe fabrication technology of VCSELs emitting in the 1.55 μm waveband
Author(s) -
K. O. Voropaev,
Б. И. Селезнев,
Aleksander Prokhorov,
А. С. Ионов,
S. A. Blokhin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1658/1/012069
Subject(s) - fabrication , optoelectronics , materials science , vertical cavity surface emitting laser , ohmic contact , wafer , laser , etching (microfabrication) , substrate (aquarium) , dry etching , quantum well , gallium arsenide , passivation , molecular beam epitaxy , distributed bragg reflector laser , optics , epitaxy , semiconductor , semiconductor laser theory , nanotechnology , layer (electronics) , oceanography , alternative medicine , physics , pathology , medicine , geology
The paper presents the results on fabrication technique of a 1,55 μm wafer-fused vertical-cavity surface-emitting lasers (VCSELs) based on the InAlGaAsP/InP optical cavity and AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by solid-source molecular beam epitaxy. The optical cavity InAlGaAsP/InP containes an active region based on multiple InGaAs quantum wells, n ++ /p ++ -In (Al)GaAs buried tunnel junction (BTJ), InGaAsP intracavity contact layers and n-InP spreading layers. The top and bottom AlGaAs/GaAs DBRs were grown on GaAs substrate, while the optical cavity InAlGaAsP/InP was grown on InP substrate. The main fabrication proceseses of 1,55 μm VCSELs such as: BTJ fabrication, dry etching of first mesa on top DBR, wet etching of second VCSEL mesa, forming of the ohmic contacts and passivation of the VCSEL structure were described in details.