Open AccessManipulation of G1Ba2Cu3O7-x Film Properties by Simply Changing Growth Temperature with RF Sputtering Method
Author(s) -
Zhongzhou Xie,
Zhonghao Li,
Hao Lü,
Jianming Xu,
Xia Luo,
Yi-Jun Zhu,
Ying Wang
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1637/1/012069
Subject(s) - sputtering , materials science , condensed matter physics , anisotropy , analytical chemistry (journal) , current density , critical current , magnetic field , thin film , field (mathematics) , magnetic anisotropy , superconductivity , magnetization , chemistry , nanotechnology , physics , optics , chromatography , quantum mechanics , mathematics , pure mathematics
We have investigated the relationship between J c ( the critical current density) and H (applied magnetic field magnitude) for Gd 1 Ba 2 Cu 3 O 7-x ((Gd)BCO) films grown from 750 °C to 850 °C by RF sputtering. Measurements of J C (H, θ) (the magnetic-field angular dependence of the critical current density) reveal that film B (800 °C) shows enhanced pinning compared with C (850 °C), A (750 °C) (Gd)BCO films. The film C (850 °C) is the most anisotropic. We speculate that a lot of stacking faults exist in film C (850 °C), based on a board peak along ab-plane and no peak along c axis from the Jc angular measurements together with the small anisotropy parameter γ = 3. The speculation is proved by angular dependence measurement of film C (850 °C) after high temperature process in oxygen.