Open AccessNovel Insulator Isolated Si NW Sensors Fabricated using Bulk Substrate with Low-cost and High-quality
Author(s) -
Qingzhu Zhang,
Ruonan Liu,
Hailing Tu,
Siqi Tang,
Yan Jiang,
Bo Li,
Jing Zhang,
Zhaohao Zhang,
Qianhui Wei,
Huaxiang Yin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1622/1/012037
Subject(s) - materials science , fabrication , silicon on insulator , insulator (electricity) , optoelectronics , photolithography , silicon , nanowire , nanosphere lithography , etching (microfabrication) , lithography , substrate (aquarium) , nanotechnology , oceanography , geology , medicine , alternative medicine , pathology , layer (electronics)
In this paper, insulator isolated Si NW array were fabricated using self-allied spacer image transfer (SIT), multi-step time division multiplexing (TDM) etching and linear oxidation processes. The insulator isolated Si NWs owe a pentagonal shape, well single crystal morphology and high nanowire quality. The fabricated Si NW array were used to fabricate insulator isolated Si NW sensors. The low-cost insulator isolated Si NW sensor fabricated from bulk silicon substrates exhibits a linearly variation of current response to the laser at this wavelength, exhibiting good repeatability and the prospect of replacing SOI materials. The proposed approach of Si NW materials and sensors fabrication realizes the high efficiency, low cost and small fluctuation of Si NW pattern and device preparation, overcoming the problems of low efficiency for e-beam lithography and the difficulty of large-scale array formation.