
A 5-13GHz Power Amplifier for UWB Applications in 40 nm CMOS Technology
Author(s) -
Jie Zhu,
Zhangfa Liu
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1607/1/012037
Subject(s) - amplifier , electrical engineering , power bandwidth , fully differential amplifier , bandwidth (computing) , direct coupled amplifier , cmos , rf power amplifier , electronic engineering , resistor , engineering , computer science , operational amplifier , voltage , telecommunications
A two-stage power amplifier using current multiplexing technology and resistor shunt feedback technology to flatten gain and expand bandwidth is designed in this paper. In this paper, the SMIC 40nm CMOS process is used. The power amplifier proposed works in the 5-13GHz frequency range, providing more than 10dB of the gain at the voltage of 1.0V, and has good input and output matching. The return loss is lower than -30dB. The stability factor Kf is maintained at about 1.1, and Bf is greater than 0. The peak power added efficiency of the power amplifier can reach 24%.