Open AccessEffects of Point Defects Introduced by Co-doping and Proton Irradiation in CaKFe4As4
Author(s) -
Yoshie Kobayashi,
Sunseng Pyon,
Ayumu Takahashi,
T. Tamegai
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1590/1/012014
Subject(s) - crystallographic defect , superconductivity , irradiation , doping , proton , materials science , stoichiometry , condensed matter physics , planar , crystallography , chemistry , optoelectronics , physics , nuclear physics , computer science , computer graphics (images)
of point defects into superconductors through proton irradiation enhances their critical current density ( J c ). Similarly, chemical doping can also produce point defects, leading to the enhancement of J c . Iron-based superconductors (IBSs) have been investigated as promising materials for practical applications because of their large J c at high magnetic fields and temperatures. Recently, another promising IBS CaKFe 4 As 4 (1144-type) was found, and attracts much interest due to its characteristic feature such as stoichiometric superconductivity and the presence of novel planar defects. We have grown single crystals of Co-doped CaKFe 4 As 4 and clarified the effect of chemically-introduced point defects on J c . We also introduced point defects through 3 MeV proton irradiation, and compared the effect of point defects to J c .