Open AccessChemical pressure effect of the electron-doped FeSe films with an electric double-layer-transistor structure
Author(s) -
Naoki Shikama,
Yuki Sakishita,
Fuyuki Nabeshima,
Akiko Maeda
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1590/1/012012
Subject(s) - materials science , doping , condensed matter physics , superconductivity , electron , electric field , layer (electronics) , optoelectronics , nanotechnology , physics , quantum mechanics
We investigated chemical pressure effect of the electron-doped FeSe 1− x S x and FeSe 1− y Te y on LaAlO 3 ( x ≤ 0.25, y ≤ 0.5) with the electric double layer transistor structure. T c of all the FeSe 1− x S x and FeSe 1− y Te y films except y = 0.5 is increased by doping electron with gate voltage V G = +5 V. T c of the electron-doped FeSe 1− x S x and FeSe 1− y Te y is decreased monotonically by substituting Se for both S and Te. The behavior is similar to those of the intercalated FeSe 1− x S x and FeSe 1− y Te y and the electron-doped FeSe 0.5 Te 0.5 with the solid-ion-conductor field-effect transistor structure, but quite different from that of the pristine FeSe 1− x S x and FeSe 1− y Te y . This difference is considered to originate from the difference of the Fermi surface topology, which suggests that the superconducting mechanism of the electron-doped FeSe is different from that of the pristine FeSe.