Open AccessSynthesis and Physical Property Measurements in Misfit Transition Metal Dichalcogenide (SbS)1.16TaS2
Author(s) -
S. Doyama,
S. Ohta,
Hiroko Sakata
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1590/1/012005
Subject(s) - superconductivity , electrical resistivity and conductivity , materials science , scanning tunneling microscope , single crystal , crystal growth , condensed matter physics , transition metal , stacking , transition temperature , crystallography , crystal (programming language) , flux (metallurgy) , flux method , mineralogy , nanotechnology , chemistry , metallurgy , nuclear magnetic resonance , physics , biochemistry , quantum mechanics , computer science , programming language , catalysis
We report the single crystal growth and superconducting transition of a misfit layered compound (SbS) 1.16 TaS 2 . We succeed in the single crystal growth with flux method. The electrical resistivity measurements revealed the superconducting transition temperature of this material as 2.9 K, which was consistent with the previous research. Scanning tunneling microscopy measurements show two kinds of surfaces corresponding to TaS 2 and SbS layers, indicating successful growth of the single crystal consist of stacking of these layers.