Open AccessCorrelation between defect and magnetism of low energy 800 keV Ar4+ irradiated ZnO thin films
Author(s) -
S. K. Neogi,
S. Bandyopadhyay
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1579/1/012022
Subject(s) - fluence , materials science , irradiation , thin film , diamagnetism , band gap , magnetism , ferromagnetism , ion , hysteresis , analytical chemistry (journal) , condensed matter physics , optoelectronics , nanotechnology , magnetic field , chemistry , physics , nuclear physics , organic chemistry , quantum mechanics , chromatography
Present work demonstrates ion beam irradiation induced modification in physical properties of ZnO thin films prepared by sol-gel spin coating technique.Different fluenceviz: 5x10 14 , 10 15 , 5x10 15 and 10 16 ions/cm 2 were chosen for irradiation.Measurements of structural, optical and magnetic properties of these films have been performed. XRD patterns of the films exhibits wurzite structure ZnO. Optical transmittances of these films were recorded in the wavelength range of 250-1000 nm, and band gap of the respective films have been estimated. Irradiated films did not show significant degradation in the crystalline structure however a noticeable shift of band edge with fluence has been observed and explained. Pristine ZnO film exhibits diamagnetic behaviour at room temperature. However prominent hysteresis has been observed for lowest fluence (5x10 14 ions/cm 2 ) irradiated films. The correlation between defects and ferromagnetism has been established in this work.