Open AccessAnalytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect
Author(s) -
Cheng He,
Chao Zhang,
Tiefeng Liu,
Zhijia Yang,
Zhipeng Zhang
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1570/1/012098
Subject(s) - quantum tunnelling , subthreshold conduction , subthreshold slope , mosfet , drain induced barrier lowering , channel (broadcasting) , transistor , field effect transistor , physics , computational physics , condensed matter physics , electrical engineering , quantum mechanics , engineering , voltage
We have proposed an analytic compact model describing the drain current characteristics valid in all operating regions, for ultra-short channel cylindrical gate-all-around metal-oxide-semiconductor field-effect transistors considering source-to-drain tunnelling effect. The drain-induced barrier lowering had been incorporated from one two-dimensional analysis in our previous compact model. In this study, to represent the energy level profile along the device channel direction into the Wentzel-Kramers-Brillouin approximation by substituting a parabolic function, we can analytically derive the expressions of the transmission coefficients for source-to-drain tunneling. In the subthreshold region, the source-to-drain tunneling current then can be evaluated using the Landauer formula. Finally, a fully analytic compact model is proposed for representing the drain current in all operating regions. The results compared with non-equilibrium Green’s function transport simulations can be obtained in a good agreement.