Open AccessStudy of resonant-tunneling diodes I-V curves kinetics under destabilizing factors influence
Author(s) -
Kirill V. Cherkasov,
С. А. Мешков,
Mstislav Makeev,
Yu. A. Ivanov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1560/1/012026
Subject(s) - quantum tunnelling , diode , terahertz radiation , kinetics , nonlinear system , ionizing radiation , radiation , range (aeronautics) , ultra high frequency , optoelectronics , computational physics , electronic engineering , materials science , physics , engineering , optics , irradiation , nuclear physics , quantum mechanics , composite material
Resonant-tunneling diodes (RTD) are prospective EHF and UHF electronics elements. Using RTDs as radio frequency converter’s nonlinear element would allow to improve converter’s performance indices and extend its frequency range up to THz. The purpose of research is investigating kinetics of the RTD’s I-V curve under given operating conditions, such as high temperature and ionizing radiation’s influence. For this case, special mathematical models are submitted. These models describe RTD I-V curves’s degradation under high temperature and ionizing radiation’s influence. Basing on described models a program package allowing to simulated RTD I-V curves’s kinetics under listed factors’ influence was developed. Results’ adequacy is verified by comparison with experimental data.