Open AccessEffects of Zn doping on the pinning potential and the glass-liquid transition temperature of YBa2Cu3O6+δ films
Author(s) -
Kai Ackermann,
Vadim Mai,
Jens Hänisch,
B. Holzäpfel
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1559/1/012044
Subject(s) - doping , materials science , condensed matter physics , epitaxy , critical current , pulsed laser deposition , transition temperature , flux pinning , glass transition , thin film , analytical chemistry (journal) , superconductivity , nanotechnology , chemistry , optoelectronics , composite material , physics , polymer , layer (electronics) , chromatography
A pristine YBa 2 Cu 3 O 6+ δ film as well as two Zn-doped YBa 2 (Cu 1− x Zn x ) 3 O 6+ δ films with doping levels x of 0.2 % and 0.4 %, respectively, grown epitaxially on SrTiO 3 single crystalline substrates by pulsed laser deposition, were investigated regarding the effect of the doping on the glass-liquid transition line and the pinning potential distribution. Zn doping did not show any effect on the shape of the transition line but caused a suppression of the transition temperature T GL of about 16 K% −1 . Although the doping did not lead to an additional pinning effect, the increase of the critical current density j c towards lower temperatures is mainly driven by the variation of the threshold critical current density, j cm . The width of the critical current density distribution j 0 saturates at low temperatures and only drops above ~ 0.9 T GL .