Open AccessParameter boundaries for the heteroepitaxial growth of REBCO films by e-beam quantitative evaporation on inclined substrate deposited MgO buffered Hastelloy tapes
Author(s) -
Oleksiy Troshyn,
Christian Hoffmann,
Veit Große,
Jens Hänisch,
B. Holzäpfel
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1559/1/012035
Subject(s) - materials science , evaporation , substrate (aquarium) , epitaxy , stoichiometry , electron beam physical vapor deposition , partial pressure , thin film , oxide , analytical chemistry (journal) , oxygen , superconductivity , high temperature superconductivity , condensed matter physics , metallurgy , composite material , nanotechnology , layer (electronics) , chemistry , thermodynamics , oceanography , physics , organic chemistry , chromatography , geology
The technology of electron beam (e-beam) quantitative evaporation of oxide powders at THEVA is quite unique among the many standard in-situ growth methods of high-temperature superconducting (HTS) films. As well known for YBa 2 Cu 3 O 7-x (YBCO) film growth the temperature and oxygen pressure should be in proximity of the YBCO stability line in the Bormann diagram. In case of e-beam quantitative evaporation, we observe a shift in the DyBa 2 Cu 3 O 7-x (DyBCO) stability line towards lower pressures and higher temperatures compared to YBCO. We investigated the temperature and oxygen partial pressure boundaries of epitaxial DyBCO growth on inclined substrate deposited MgO (ISD-MgO) buffered Hastelloy tapes. For completeness, the influence of powder stoichiometry and evaporation rate on HTS epitaxial growth is shown. For the first time high-quality HTS films have been grown by e-beam quantitative evaporation without employing an oxygen shuttle and with oxygen in the chamber background instead.