Open AccessSubmicron-sized MoRe-doped Si-MoRe Josephson junctions with a low specific capacitance
Author(s) -
A. A. Kalenyuk,
A. P. Shapovalov,
В. И. Шнырков,
V. E. Shaternik,
Mikhail Belogolovskii,
Pascal Febvre,
F. Schmidl,
P. Seidel
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1559/1/012005
Subject(s) - josephson effect , capacitance , resistive touchscreen , materials science , pi josephson junction , optoelectronics , condensed matter physics , superconductivity , doping , voltage , electrical engineering , diffusion capacitance , electrode , physics , engineering , quantum mechanics
We start with a short look at the problem of low-capacitance Josephson junctions, its history, and actual state-of-the-art. It is argued that such devices are important for applications requiring nonhysteretic current-voltage characteristics since reduction of capacitance by several times makes it possible to increase the device resistance by the same amount while keeping the McCumber-Stewart damping parameter unaltered. Moreover, at very high frequencies the capacitance in the RCSJ circuit with a parallel connection starts to shunt the superconducting current component due to reduction of the corresponding reactance inversely proportional to C. Hence, to extend the operating frequency range of a Josephson junction its capacitance should be as small as possible. As a solution of a new type of the Josephson device, less resistive and with smaller capacitance, we propose and realize a submicron-sized trilayer with tens nm-thick Si interlayer doped by metallic ultra-small inclusions and superconducting Mo-Re alloy electrodes.