Open AccessA low-voltage with high pumping efficiency charge pump for flash memory
Author(s) -
Yu Xie,
Shanzhou Huang,
Yuming Xue,
Quanzhen Duan
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1550/5/052027
Subject(s) - charge pump , voltage , energy conversion efficiency , diode , electrical efficiency , materials science , flash (photography) , power (physics) , voltage doubler , electrical engineering , voltage drop , charge (physics) , optoelectronics , engineering , physics , voltage reference , optics , capacitor , dropout voltage , quantum mechanics
This paper proposed a high efficiency of power conversion and high pumping gain charge pump applied to the field of low power consumption like flash memory. The threshold voltage drop, body effect and the undesired charge transfer are three significant factors limiting the pumping gain and power conversion efficiency. In order to solve the threshold voltage drop and body effect, the charge transfer switches (CTS) are utilized in the proposed charge pump. What’s more, an optimized substrate control strategy and body-source diode are applied to eliminate undesired charge transfer for improving power efficiency. And a complementary branch scheme is employed to reduce the output voltage ripple. The proposed charge pump is implemented in SMIC 0.18 um standard technology and the simulation results indicate better performance and high efficiency of power conversion. The proposed charge pump satisfies the relevant specifications of the charge pump applied to flash memory.