Open AccessOptimization of Al-doped ZnO films by RF magnetron sputtering at room temperature for Cu (In, Ga) Se2 solar cells
Author(s) -
Xianyang Zhang,
Rongyang Zhu
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1549/4/042006
Subject(s) - materials science , copper indium gallium selenide solar cells , sputter deposition , thin film , optoelectronics , doping , transmittance , sputtering , electrical resistivity and conductivity , solar cell , cavity magnetron , rf power amplifier , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , amplifier , engineering , cmos , chromatography
In this work, Al-doped zinc oxide (AZO) thin films were deposited by RF magnetron sputtering with various RF power at room temperature. The effect of RF power on the structural, electrical, and optical properties of AZO thin films were investigated by XRD, SEM, UV–Vis–NIR spectroscopy and Hall measurements. The lowest resistivity of 1.8×10 −3 Ω·cm was obtained at the highest RF power of 450 W. The average optical transmittance is about 90% in the visible range and above 80% in the range of 300-2000 nm. CIGS thin-film solar cells were prepared using the AZO films as the windows layer and an efficiency of 15.36% in CIGS solar cell has been achieved.