Open AccessSilicon dioxide films prepared by the sol-gel method for use in elements of microsystem technique
Author(s) -
А. Г. Козлов,
E V Filonina
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1546/1/012117
Subject(s) - silicon dioxide , annealing (glass) , spin coating , materials science , sol gel , silicon , methyl orange , analytical chemistry (journal) , coating , thin film , porous silicon , porosity , chemical engineering , atmospheric temperature range , composite material , nanotechnology , chemistry , optoelectronics , chromatography , organic chemistry , catalysis , physics , photocatalysis , meteorology , engineering
Silicon dioxide films prepared by the sol-gel method from a solution based on tetraethoxysilane by spin-coating and subsequent thermal annealing in the temperature range from 200 to 600 °C are considered. The transmission spectra of the pure and impregnated with methyl orange silicon dioxide films are studied. It was found that the transmission of the all films depends on the annealing temperature and the impregnated films have the lower transmission than the pure ones. Studying the transmission difference between the pure and impregnated films in the band at 464 nm, corresponding to the highest absorption of methyl orange, it was determined that films annealed at 400 °C have the highest porosity.