Open AccessEmploying Successive Ionic Layer Adsorption and Reaction (SILAR) Method on the Fabrication of Cu3BiS3-Semiconductor-Sensitized Solar Cells
Author(s) -
N. M. Noer,
Suci Rahayu,
Kerista Sebayang,
Herty Afrina Sianturi,
Minway Lee
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1542/1/012041
Subject(s) - ternary operation , fabrication , ionic bonding , adsorption , layer (electronics) , materials science , bismuth , semiconductor , metal , copper sulfide , chemical engineering , solar cell , energy conversion efficiency , oxide , copper , inorganic chemistry , nanotechnology , ion , chemistry , metallurgy , optoelectronics , organic chemistry , computer science , medicine , alternative medicine , pathology , engineering , programming language
Successive ionic layer adsorption and reaction (SILAR) method is a modified version of chemical bath deposition (CDB) that serves as a low-cost and convenient on the production of ternary metal chalcogenides. This research reported the utilization of SILAR method on the fabrication of Cu 3 BiS 3 semiconductor-sensitized solar cells. The concentration of bismuth and copper precursor were varied, namely 0.03 M and 0.1 M, whereas the precursor of sulfide was varied in the concentration of 0.02 M and 0.05 M. The variation of SILAR cycles was employed to investigate the most appropriate cycle numbers in producing Cu 3 BiS 3 , in particular 3-9 cycles, 5-15 cycles, and 6-6 cycle with the immersing time of 20 s for each. The results show that there were only two suitable peaks appeared for 3-9 cycles and 6-6 cycles, while 5-15 cycles provide the more preferable XRD patterns with the power conversion efficiency of 0.02% ( Jsc of 1.75 mA/cm 2 ; Voc of 0.04 V; FF of 29.65%). It can be said that SILAR method with higher number of cycles can be employed to fabricate Cu 3 BiS 3 ; however, smaller PCE came from inappropriate structure alignment between Cu 3 BiS 3 and metal oxide layer.