Open AccessMBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate
Author(s) -
R. R. Reznik,
K. P. Kotlyar,
А. И. Хребтов,
С. А. Кукушкин,
N. V. Kryzhanovskaya,
G. É. Cirlin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1537/1/012003
Subject(s) - materials science , optoelectronics , substrate (aquarium) , photoluminescence , silicon carbide , layer (electronics) , silicon , nanostructure , nanotechnology , composite material , oceanography , geology
A possibility of GaN NWs and InGaN nanostructures of a branched morphology MBE growth on SiC/Si and Si substrate has been demonstrated. It was found that the intensity of the photoluminescence spectrum of the GaN NWs on SiC/Si(111) substrate integrally more than 2 times higher than that of the best structures of GaN NWs without a buffer layer of silicon carbide. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.