Open AccessA novel Cu2O/Cu grid for photoelectrochemical water spliting
Author(s) -
Xing Wang,
Jun Chen,
Xiaoling Wu,
Guoan Cheng,
Ruiting Zheng
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1520/1/012013
Subject(s) - photocurrent , deposition (geology) , materials science , electrochemistry , electrode , current density , copper , metal , water splitting , semiconductor , grid , analytical chemistry (journal) , metallurgy , optoelectronics , chemistry , catalysis , photocatalysis , geology , paleontology , biochemistry , physics , quantum mechanics , chromatography , sediment , geodesy
In this study, we reported a novel metal-semiconductor junction grid, which is made of Cu and Cu 2 O. The Cu 2 O film is deposited on the surface of a Cu grids by a simple electrochemical deposition method. Cu grids with 200 mesh has larger specific surface area than that of Cu sheet and will enhance the water splitting performance of photo-electrodes. Different Cu-Cu 2 O grid samples were prepared by changing the electrodeposition time and current. The best deposition parameters for Cu 2 O films on Cu grids were 3 hours of deposition time and 0.4 mA/cm 2 of deposition current density. Under the best condition, the highest photocurrent density was −3.83 mA/cm 2 which was higher than −2.36mA/cm 2 of Cu 2 O films on Cu sheet.