Open AccessPreparation and characterization of Gd2O3-doped HfO2high-k gate dielectric thin films by RF sputtering
Author(s) -
Mei Ji,
Lei Wang,
Jun Du
Publication year - 2009
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/152/1/012005
Subject(s) - materials science , high resolution transmission electron microscopy , dielectric , amorphous solid , gate dielectric , doping , sputter deposition , thin film , high κ dielectric , equivalent oxide thickness , dielectric loss , optoelectronics , sputtering , gate oxide , transmission electron microscopy , analytical chemistry (journal) , nanotechnology , crystallography , electrical engineering , chemistry , transistor , voltage , engineering , chromatography