Open AccessThe phenomenon of memory in vanadium ox nitride films
Author(s) -
Kh O. Urinov,
Kh A. Jumanov,
A. K. Amonov,
J. O. Urinov,
A. Sh Abduganiev
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1515/2/022076
Subject(s) - vanadium , dissolution , materials science , vanadium nitride , inorganic chemistry , phase transition , nitride , metal , transition metal , insulator (electricity) , dielectric , chemical engineering , chemistry , catalysis , nanotechnology , metallurgy , condensed matter physics , organic chemistry , composite material , optoelectronics , physics , layer (electronics) , engineering
Vanadium oxides are representatives of a wide class of compounds possessing a metal-insulator phase transition. The properties of both the oxides themselves and their solid solutions with oxides of other metals have been well studied. The question of the possibility of dissolving nonmetallic components in the V-O system and its wobbling on the metal-insulator phase transition remain an open question. The solution of this problem, apart from the scientific side can also have practical significance: in spite of the wide possibilities and uses of vanadium oxides in optoelectronics, microwave technology and other fields, the need to search for materials with given temperatures of metal-insulator phase transition and electro-physical characteristics is obvious. In this paper, an attempt is made to dissolve nitrogen in vanadium dioxide films during their deposition by thermolysis of nitrogen-containing alkoxy derivatives.