Open AccessTemperature-dependent transport properties of two-dimensional hole gas in Ge channel modulation-doped square quantum wells
Author(s) -
Tran Thi Hai,
Nguyễn Thị Dung,
Nguyễn Thị Thảo
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1506/1/012011
Subject(s) - condensed matter physics , scattering , quantum well , phonon , electron mobility , phonon scattering , heterojunction , autocorrelation , effective mass (spring–mass system) , doping , materials science , physics , quantum mechanics , laser , mathematics , statistics
We present a theoretical study of the transport properties of two-dimensional hole gas (2DHG) in Ge channel modulation-doped square quantum wells, with very high room-temperature drift mobilities. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. The results were used to determine the hole mobility where only the relevant scattering processes, namely acoustic phonons (Deformation potential and Piezoelectric coupling), ionized impurity, surface roughness were considered. The partials and total mobility dependences on temperature were found. It is shown that acoustic phonon and surface roughness scattering are the dominant mechanism. The interpretation of these results is carried out and the scattering mechanisms limiting the 2DHG mobility in Ge quantum wells of SiGe heterostructure are discussed.