Open AccessSmall-signal and noise GaAs pHEMT modeling for low noise amplifier design
Author(s) -
A. Popov,
Dmitry V. Bilevich,
Aleksandr A. Metel,
A. S. Salnikov,
И. М. Добуш,
A. E. Goryainov,
A. A. Kalentyev
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1499/1/012033
Subject(s) - low noise amplifier , noise (video) , electronic engineering , amplifier , noise figure , noise temperature , high electron mobility transistor , y factor , smoothing , computer science , electrical engineering , engineering , transistor , phase noise , cmos , voltage , artificial intelligence , image (mathematics) , computer vision
Small-signal and noise GaAs pHEMT modeling techniques that include analytical extraction followed by optimization are demonstrated. The following measurement processing steps were carried out before the parameter extraction: de-embedding, data smoothing and selecting the bias mode appropriate for the extraction of parasitic resistances and inductances. A low-noise amplifier operating in 5G frequency band was designed using the resulting model. A comparison between simulation and measurements of noise factor and S-parameters of the obtained low-noise amplifier is presented.