Open AccessFTIR, Raman and XRD analysis of graphene oxide films prepared by modified Hummers method
Author(s) -
G Surekha,
K. Venkata Krishnaiah,
Natarajan Ravi,
R. Padma Suvarna
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1495/1/012012
Subject(s) - raman spectroscopy , graphene , fourier transform infrared spectroscopy , materials science , graphite oxide , analytical chemistry (journal) , band gap , graphite , oxide , absorption band , absorption (acoustics) , nanotechnology , chemical engineering , chemistry , optics , organic chemistry , composite material , optoelectronics , physics , metallurgy , engineering
Graphene oxide (GO) is a promising material for energy storage device applications. Modified Hummers method (MHM) has been used to prepare GO films from graphite flakes by Sol-Gel method. With the aid of bridging agent dimethyldichlorosiline, structurally fine GO films were prepared. Fourier transform and infra-red (FTIR) spectrum of the GO thin film possesses absorption bands at 461, 594, 670, 803, 1020, 1243, 1457, 1544, 1627, 2850, 2926 and 3429 cm −1 . A sharp OH − absorption band was revealed at 3429 cm −1 . Two vibrational bands were noticed in the Raman spectrum for pure graphite flakes at 1578 and 2718 cm −1 . However, for GO, five Raman vibrational bands were unveiled at 413, 1344, 1597, 2697 and 2945 cm −1 . Among these bands, the mode at 1344 cm −1 was assigned to D-band and 1597 cm −1 was assigned to G-band. Compared to D-band, G-band was dominated for the GO films. Several times of centrifugation and ultra-sonication process have aided to obtain more intensity of G-band. In addition, 2D and D + G bands were also revealed in the GO films. X-ray diffraction (XRD) analysis was confirmed that a sharp peak at 10.64 degrees leads to the formation of GO thin film.