Open AccessAtomic layer deposition of AlN using trimethylaluminium and ammonia
Author(s) -
Milena Beshkova,
Petro Deminskyi,
Henrik Pedersen,
Rositsa Yakimova
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1492/1/012046
Subject(s) - crystallite , wurtzite crystal structure , materials science , thin film , atomic layer deposition , scanning electron microscope , substrate (aquarium) , layer (electronics) , deposition (geology) , analytical chemistry (journal) , chemical engineering , crystallography , nanotechnology , chemistry , zinc , composite material , metallurgy , organic chemistry , paleontology , oceanography , sediment , geology , engineering , biology
Thin AlN films were grown in a Picosun R-200 atomic layer deposition (ALD) reactor on Si substrates. Trimethylaluminium (TMA) and NH 3 were used as precursors; the substrates were cleaned in-situ by H 2 and N 2 plasma. The surface morphology of the films grown was studied in the temperature range 350 – 450 °C. The films’ crystalline structure was investigated by grazing incidence X-ray diffraction. The AlN films were polycrystalline with a hexagonal wurtzite structure regardless of the substrate temperature. The results of scanning electron microscopy (SEM) revealed nanometer-sized crystallites, with the size increasing from 10 nm to 30 nm as the deposition temperature was increased. The results are promising in view of further studies of the properties of thin AlN films.