Open AccessStrained ultra-thin films of BaO: a molecular dynamics investigation
Author(s) -
V. B. Nascimento,
José Pedro Rino,
B. V. Costa
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1483/1/012012
Subject(s) - ferroelectricity , materials science , thin film , dielectric , epitaxy , piezoelectricity , phase diagram , condensed matter physics , phase (matter) , substrate (aquarium) , strain engineering , polarization (electrochemistry) , nanotechnology , composite material , optoelectronics , chemistry , layer (electronics) , physics , oceanography , organic chemistry , geology , silicon
A recent theoretical work by Bousquet and collaborators have predicted that ferroelectric ordering could be induced in the rocksalt oxides of alkaline earth metals (BaO, MgO, CaO and SrO) by strain. The expected functional properties present in these strained binary oxides, like polarization, dielectric constant and piezoelectric response, would be comparable to those of typical ferroelectric perovskites. Consequently, the strained binary oxides would be promising materials for fabrication of devices like ferroelectric memories and sensors. One possible way to explore the potential underlying these theoretical predictions is to grow thin and ultra-thin films of these binary oxides under epitaxial strain by choosing an adequate substrate. In such systems the interplay between epitaxial strain and the lack of translational symmetry (limited film thickness) may lead to the formation of interesting (anti)ferroelectric phases. Our goal in this work is to explore the potential structural and functional phase diagram of BaO ultra-thin films (thickness of only 8 BaO layers, ≈ 20 nm) obtained for different values of compressive epitaxial strain and temperature by performing a molecular dynamics investigation. A polarized phase (antipolar) is observed at a compressive strain of -9.0%, wich resists till a melting temperature around 1500 K, which is indeed high for such an ultra-thin film.