Open AccessGaAs diode structures with n+-p junction on Ge/Si templates
Author(s) -
А. В. Рыков,
С. А. Денисов,
В. Г. Шенгуров,
N. V. Baidus,
Yu. N. Buzynin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012034
Subject(s) - optoelectronics , materials science , template , chemical vapor deposition , substrate (aquarium) , diode , silicon , epitaxy , p–n junction , deposition (geology) , semiconductor , nanotechnology , layer (electronics) , paleontology , oceanography , sediment , biology , geology
GaAs layers were grown by metalorganic epitaxy on Ge/Si(001) substrates, which were formed by chemical vapor deposition with decomposition of GeH 4 on a hot wire. High structural quality of thin Ge layers (0.2 - 0.3 μm) on a silicon substrate made it possible to grow high-quality GaAs layers. The resulting n + -GaAs/p-GaAs/p-Ge/p + -Si diode structures demonstrate low reverse currents.