Open AccessAcceptor-related terahertz and infrared photoconductivity in p-type GaAs/AlGaAs quantum wells
Author(s) -
M. Ya. Vinnichenko,
I. S. Makhov,
V. Yu. Panevin,
N. Yu. Kharin,
L. E. Vorobjev,
Sergey Sorokin,
I. V. Sedova,
D. A. Firsov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012025
Subject(s) - photoconductivity , terahertz radiation , photocurrent , excited state , acceptor , quantum well , materials science , optoelectronics , infrared , ground state , doping , condensed matter physics , atomic physics , physics , optics , laser
Photoconductivity in GaAs/AlGaAs quantum well nanostructures doped with acceptors was studied at low lattice temperatures in the infrared and terahertz spectral ranges. The photocurrent spectra revealed features that can be attributed to the hole transitions from the ground acceptor state to the excited acceptor states and size-quantized subbands.