Open AccessStudy of current-voltage characteristics of InAsSb-based LED heterostructures in 4.2 - 300 K temperature range
Author(s) -
Е.В. Кузьменко,
A. A. Semakova,
N. L. Bazhenov,
S. S. Kizhaev,
A. V. Chernyaev,
N. N. Stoyanov,
K. D. Mynbaev
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012024
Subject(s) - quantum tunnelling , heterojunction , atmospheric temperature range , optoelectronics , diode , materials science , quantum well , condensed matter physics , light emitting diode , epitaxy , range (aeronautics) , current (fluid) , leakage (economics) , voltage , layer (electronics) , nanotechnology , physics , optics , laser , macroeconomics , economics , quantum mechanics , meteorology , composite material , thermodynamics
Current-voltage characteristics of light-emitting diode heterostructures based on InAsSb epitaxial films and a multi quantum-well structure were studied in the temperature range T = 4.2–300 K. It is shown that transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K. The tunnelling effect appears in the temperature range 4.2–77 K. The presence of quantum wells in the active layer results in increased diode leakage currents due to tunnelling.