Open AccessVariable-temperature luminescence studies of InAsSb-based LED heterostructures emitting beyond 5 μm
Author(s) -
A. A. Semakova,
V. V. Romanov,
K. D. Moiseev,
N. L. Bazhenov,
K. D. Mynbaev
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012023
Subject(s) - electroluminescence , heterojunction , optoelectronics , materials science , light emitting diode , active layer , luminescence , wavelength , fabrication , band gap , layer (electronics) , nanotechnology , medicine , alternative medicine , pathology , thin film transistor
Variable-temperature (4.2 - 300 K) electroluminescence (EL) studies were performed on two asymmetrical InAs/InAsSb/InAsSbP LED heterostructures emitting at 5.02 and 5.10 μm wavelengths at 300 K (with an InSb content in the active layer of 0.15 and 0.16, respectively). For the structure with the narrowest bandgap, a weak temperature dependence of the position of the EL peak was observed. Along with strong carrier localization in the active layer, which was provided by the design of the structure, this made the studied heterostructures promising for fabrication of LEDs with working wavelengths extending beyond 5 μm at 300 K.