Open AccessStructure and surface morphology of GeSn/Si(001) layers grown by HW CVD with co-evaporation of Sn
Author(s) -
А. В. Зайцев,
M. Yu Kuz’min,
Sergey A. Denisov,
В. Г. Шенгуров,
V. Yu. Chalkov,
А. В. Кудрин,
M. V. Ved,
Д. О. Филатов
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012016
Subject(s) - photoluminescence , full width at half maximum , materials science , chemical vapor deposition , evaporation , epitaxy , analytical chemistry (journal) , spectral line , optoelectronics , chemistry , nanotechnology , physics , layer (electronics) , chromatography , thermodynamics , astronomy
This paper presents the results of the investigation of Ge 1-x Sn x epitaxial layers grown by the hot wire chemical vapor deposition (HW CVD) method with simultaneous evaporation of Sn from a standard effusion cell. The Ge 1-x Sn x with a Sn molar fraction of 7.2% and a full width at half maximum (FWHM) of the rocking curve of 7.6` demonstrated intense photoluminescence at room temperature. The peaks in the energy bands 0.70 – 0.73 eV and 0.63 – 0.65 eV have been observed in the photoluminescence spectra. These peaks were related to the direct and indirect interband radiative optical transitions in GeSn, respectively.