Open AccessPeculiarities of the structural properties of InxGa1-xN polytype nanostructures grown by molecular-beam epitaxy
Author(s) -
V. O. Gridchin,
K. P. Kotlyar,
R. R. Reznik,
D S Shevchuk,
Д. А. Кириленко,
Н. А. Берт,
І. П. Сошніков,
G. É. Cirlin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012014
Subject(s) - wurtzite crystal structure , transmission electron microscopy , materials science , indium , molecular beam epitaxy , nanostructure , crystallography , zinc , crystal structure , scanning electron microscope , crystal (programming language) , nanocrystal , nanotechnology , epitaxy , optoelectronics , chemistry , metallurgy , composite material , layer (electronics) , computer science , programming language
In the article, the study of the morphology, crystal structure and chemical composition of In x Ga 1-x N nanostructures is presented. Scanning electron microscopy measurements show that the sample has a structure consisting of nanotubes, on top of which an array of nanocrystals (so-called “nanoflowers”) is formed. The results of transmission electron microscopy show that the nanotubes have a wurtzite crystal structure, whereas the “nanoflowers” exhibit both wurtzite and zinc blende one. The indium composition in wurtzite and zinc blende segments is about 20 % and 10 %, respectively.