Open AccessAnalysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation
Author(s) -
Vladimir V. Dirko,
Kirill A. Lozovoy,
А. П. Коханенко,
Olzhas I. Kukenov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012010
Subject(s) - superstructure , reflection high energy electron diffraction , electron diffraction , epitaxy , reflection (computer programming) , substrate (aquarium) , materials science , crystallography , condensed matter physics , range (aeronautics) , diffraction , chemistry , optics , nanotechnology , physics , composite material , geology , thermodynamics , oceanography , layer (electronics) , computer science , programming language
In this paper, we consider the 7×7 to 5×5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of the critical thickness of the 7×7 to 5×5 superstructure transition on the substrate temperature are obtained for the first time.