Open AccessThe increase in band bending at the p-GaN(Cs) – vacuum interface due to the photoemission from surface states
Author(s) -
S. A. Rozhkov,
V. V. Bakin,
S. S. Kosolobov,
H. E. Scheibler,
А. С. Терехов
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012008
Subject(s) - photocathode , band bending , surface states , materials science , semiconductor , range (aeronautics) , photon energy , band gap , optoelectronics , photon , electron , atomic physics , vacuum level , inverse photoemission spectroscopy , electron affinity (data page) , angle resolved photoemission spectroscopy , surface (topology) , condensed matter physics , chemistry , optics , electronic structure , physics , geometry , mathematics , quantum mechanics , organic chemistry , molecule , composite material
The photoelectron processes in a p -GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90–295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p -GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.