Open AccessStructural properties of ZnSe/InSe/ZnSe heterostructures grown by molecular beam epitaxy on GaAs(001) substrates
Author(s) -
P. S. Avdienko,
Д. А. Кириленко,
I. V. Sedova,
Sergey Sorokin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012006
Subject(s) - heterojunction , molecular beam epitaxy , electron diffraction , materials science , transmission electron microscopy , quantum well , optoelectronics , diffraction , reflection (computer programming) , epitaxy , reflection high energy electron diffraction , crystallography , optics , condensed matter physics , chemistry , nanotechnology , physics , layer (electronics) , computer science , programming language , laser
The paper reports on molecular beam epitaxy of ZnSe/InSe/ZnSe quantum well (QW) heterostructures grown on GaAs(001) substrates as well as studies of their structural properties. The structures were characterized by reflection high energy electron diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy techniques. The evolution of surface morphology of QW heterostructures as a function of the InSe thickness has been studied. The quasi van der Waals growth of ZnSe on the InSe(0001) surface has been demonstrated, with the ZnSe(111) plane being oriented parallel to the (0001) plane of InSe because of a small lattice mismatch between InSe and ZnSe(111).